Introduction

Technologies/Methods

GaAs, the early experiments

 QUBITS I: Electrons

 QUBITS II: holes 

Techniques

Charge sensing

• J. M. Elzerman, R. Hanson, J. S. Greidanus, L. H. Willems van Beveren, S. De Franceschi, L. M. K. Vandersypen, S. Tarucha & L. P. Kouwenhoven. Few-electron quantum dot circuit with integrated charge read out. Phys. Rev. B 67, 161308 (2003).
• L. M. K. Vandersypen, J. M. Elzerman, R. N. Schouten, L. H. Willems van Beveren, R. Hanson & L. P. Kouwenhoven. Real-time detection of single-electron tunneling using a quantum point contact. Appl. Phys. Lett. 85, 4394 (2004).
• W. Lu, Z. Ji, L. Pfeiffer, K. W. West & A. J. Rimberg. Real-time detection of electron tunnelling in a quantum dot. Nature 423, 422–425 (2003).

Spin-to-Charge

• J. M. Elzerman, R. Hanson, L. H. Willems van Beveren, B. Witkamp, L. M. K. Vandersypen & L. P. Kouwenhoven. Single-shot read-out of an individual electron spin in a quantum dot. Nature 430, 431–435 (2004).

RF charge sensor

• R. J. Schoelkopf, P. Wahlgren, A. A. Kozhevnikov, P. Delsing & D. E. Prober. Radio-frequency single-electron transistor (RF-SET): a fast and ultrasensitive electrometer. Doktorsavhandlingar vid Chalmers Tek. Hogsk. 1238, 1238–1242 (1998).
• D. J. Reilly, C. M. Marcus, M. P. Hanson & A. C. Gossard. Fast single-charge sensing with a rf quantum point contact. Appl. Phys. Lett. 91, 89–92 (2007).

RF gate reflectometry

• J. I. Colless, A. C. Mahoney, J. M. Hornibrook, A. C. Doherty, H. Lu, A. C. Gossard & D. J. Reilly. Dispersive readout of a few-electron double quantum dot with fast rf gate sensors. Phys. Rev. Lett. 110, 1–5 (2013).
• A. West, B. Hensen, A. Jouan, T. Tanttu, C.-H. Yang, A. Rossi, M. F. Gonzalez-Zalba, F. Hudson, A. Morello, D. J. Reilly & A. S. Dzurak. Gate-based single-shot readout of spins in silicon. Nat. Nanotechnol. 14, 437–441 (2019).

How it started (GaAs)

• J. R. Petta. Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots. Science, 309, 2180–2184 (2005).
• F. H. L. Koppens, C. Buizert, K. J. Tielrooij, I. T. Vink, K. C. Nowack, T. Meunier, L. P. Kouwenhoven & L. M. K. Vandersypen. Driven coherent oscillations of a single electron spin in a quantum dot. Nature 442, 766–771 (2006).
• K. C. Nowack, F. H. L. Koppens, Y. V. Nazarov & L. M. K. Vandersypen. Coherent Control of a Single Electron Spin with Electric Fields. Science (80-. ). 318, 1430–1433 (2007).
• S. Amasha, K. MacLean, I. P. Radu, D. M. Zumbühl, M. A. Kastner, M. P. Hanson & A. C. Gossard. Electrical control of spin relaxation in a quantum dot. Phys. Rev. Lett. 100, 1–4 (2008).

QUBITS

Electrons

Nanowires

• Nadj-Perge, S., Frolov, S. M., Bakkers, E. P. A. M. and Kouwenhoven, L. P. (2010) “Spin-orbit qubit in a semiconductor nanowire”, Nature 468, 7327.
• Nadj-Perge, S. et al. Spectroscopy of spin-orbit quantum bits in indium antimonide nanowires. Phys. Rev. Lett. 108, 1–5 (2012).

Phosphor Donor:

• Muhonen, Laucht, Itoh, Dzurak Morello et al. Storing quantum information for 30 seconds in a nanoelectronic device. Nat. Nano. 9, 98(2014).

Silicon CMOS:

• Veldhorst et al. An addressable quantum dot qubit with fault-tolerant control-fidelity. Nat. Nanotechnol. 9, 981–985 (2014).

Si/SiGe QWs

• Kawakami et al. Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot. Nat. Nano. 9, 666 (2014).

• Yoneda, J. et al. A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%. Nat. Nanotechnol. 13, 102–106 (2018).

Micromagnets / slanting Zeeman field

• M. Pioro-Ladrière, T. Obata, Y. Tokura, Y.-S. Shin, T. Kubo, K. Yoshida, T. Taniyama & S. Tarucha. Electrically driven single-electron spin resonance in a slanting Zeeman field. Nat. Phys. 4, 776–779 (2008).

• Brunner, Pioro-Ladrière, Tarucha et al. Two-Qubit Gate of Combined Single-Spin Rotation and Interdot Spin Exchange in a Double Quantum Dot. Phys. Rev. Lett. 107, 146801 (2011).

Si/SiGe 

• Zajac, D. M., Hazard, T. M., Mi, X., Nielsen, E. & Petta, J. R. Scalable Gate Architecture for a One-Dimensional Array of Semiconductor Spin Qubits. Phys. Rev. Appl. 6, 1–8 (2016).

Holes

Silicon CMOS

• Maurand et al. A CMOS silicon spin qubit. Nat. Comm. 13575 (2016). 

Germanium

•  Vukušić, Katsaros et al.  Single-Shot Readout of Hole Spins in Ge. Nano Lett. 18, 7141–7145 (2018).
• Watzinger, H. et al. A germanium hole spin qubit. Nat. Commun. 9, 3902 (2018).

Strained Ge QW:

• Hendrickx, Scappucci, Veldhorst, N. W. et al. Gate-controlled quantum dots and superconductivity in planar germanium. Nat. Commun. 9, 2835 (2018).
• Hendrickx, spin qubit paper, Arxiv

GaAs

• D. Q. Wang, O. Klochan, J.-T. Hung, D. Culcer, I. Farrer, D. A. Ritchie & A. R. Hamilton. Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot. Nano Lett. 16, 7685–7689 (2016).

Advanced

• T. F. Watson, S. G. J. Philips, E. Kawakami, D. R. Ward, P. Scarlino, M. Veldhorst, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson & L. M. K. Vandersypen , A programmable two-qubit quantum processor in silicon, Nature volume 555, pages633–637(2018).
• Zajac, Petta et al. Resonantly driven CNOT gate for electron spins. Science 359, 439–442 (2018).
• M. Veldhorst, H. G. J. Eenink, C. H. Yang & A. S. Dzurak. Silicon CMOS architecture for a spin-based quantum computer. Nat. Commun. 8, (2017).

Reviews

• C. Kloeffel & D. Loss. Prospects for Spin-Based Quantum Computing in Quantum Dots. Annu. Rev. Condens. Matter Phys. 4, 51–81 (2013).

Direct Rashba (theory)

C. Kloeffel, M. J. Rančić & D. Loss. Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions. Phys. Rev. B 97, 1–25 (2018).

F. Maier, C. Kloeffel & D. Loss. Tunable g factor and phonon-mediated hole spin relaxation in Ge/Si nanowire quantum dots. Phys. Rev. B 87, 161305 (2013).

C. Kloeffel, M. Trif, P. Stano & D. Loss. Circuit QED with hole-spin qubits in Ge/Si nanowire quantum dots. Phys. Rev. B 88, 241405 (2013).