On arXiv: Silicon quantum dot devices with a self-aligned 2nd gate layer


We present silicon finFET quantum dots with perfectly self-aligned 2nd gate layer and gate lengths down to 15 nm. In a double quantum dot, we find Pauli spin blockade with leakage dominated by spin-orbit interaction and extract a hole g-factor of ~1.6, and a rather short spin-orbit length of ~50 nm, promising fast all-electrical hole spin qubits. https://arxiv.org/abs/2007.15400