Published as Editor's pick in APL: Silicon quantum dots with a self-aligned gates
We present silicon finFET quantum dots with perfectly self-aligned 2nd gate layer and gate lengths down to 15 nm. The fabrication is industry compatible and scalable and gives very high quality devices. We observe Pauli spin blockade and extract the hole g-factor and strong spin-orbit coupling with spin-orbit length of ~50 nm, thus paving the way for scalable silicon spin qubits with fast, all-electrical control. Devices were fabricated at the IBM Zürich clean room in collaboration with the Uni Basel team; quantum transport measurements were done in Basel.
S. Geyer, et al. Appl. Phys. Lett. 118, 104004 (2021) (Editor's pick)