Tunnel junctions are one of the key elements of chip-scale microsystems serving various technologies from classical microelectronics to quantum information. Aluminium and its oxide (AlOx) have dominated cryogenic tunnel junction technology for decades due to the high quality of AlOx barriers and Al superconducting properties below 1.2 K. However, many applications require non-superconducting junctions, either standalone or in combination with superconducting technology, motivating efforts to suppress Al superconductivity through magnetic fields, doping, or proximity effects—approaches that so far suffered from integration compatibility and scalability issues. 

Here, we present a CMOS-compatible normal-metal tunnel junction technology based on TiW alloy and AlOx barriers. We demonstrate wafer-scale fabrication of TiW/Al-AlOx/TiW junctions and validate their performance in Coulomb blockade thermometers operating down to 20 mK, confirming robust normal-state behavior. This TiW-based architecture offers a scalable solution for non-superconducting tunnel junctions across a broad temperature range, enabling integration into advanced cryogenic, quantum and nanoelectronic chip-level systems.

Collaboration between VTT Finland (sample technology) and Basel (low temperature measurements). 

Juho Luomahaara*, Kristupas Razas*, Omid Sharifi Sedeh*, Renan P. Loreto*, Janne S. Lehtinen, Mingchi Xu, Armel A. Cotten, Aldo Tarascio, Peter Müller, Nikolai Yurttagül, Lassi Lehtisyrjä, Leif Grönberg, Christian P. Scheller, Jonathan R. Prance, Michael D. Thompson, Richard P. Haley, Mika Prunnila, and Dominik M. Zumbühl, arXiv:2602.14637, manuscript pdf
* equally contributing authors