Ambipolar quantum dots in undoped silicon fin field-effect transistors: new arXiv submission
We integrate ambipolar quantum dots in silicon fin fi eld-eff ect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by using a metallic nickel silicide with Fermi level close to the silicon mid-gap position. We demonstrate stable quantum dot operation in the few charge carrier Coulomb blockade regime for both electrons and holes, opening the way for spin qubits hosted in such fin transistors. arXiv:1807.04121