"Ambipolar dots in Si finFETs..." published in Appl. Phys. Letters
Ambipolar quantum dots in silicon fin fi eld-eff ect transistors are defined using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We demonstrate stable quantum dot operation in the few charge carrier Coulomb blockade regime for both electrons and holes, opening the way for spin qubits hosted in such fin transistors. Appl. Phys. Lett. 113, 122107 (Sep 21, 2018).