We study theoretically the Dresselhaus spin-orbit interaction (SOI) in zinc-blende nanowires of various growth directions. While the Dresselhaus SOI is suppressed for select directions and confinements, many configurations allow for a strong Dresselhaus SOI. A similarly strong Rashba term can be gate-induced, providing a means to switch the SOI on and off. Remarkably high Dresselhaus SOI energies ~millielectronvolt are expected for narrow diameter InSb nanowires. Carbadillo, Kloeffel, et al. arXiv:1910.00562.